1.Gallium oxide is used as high-purity analytical reagent and semiconductor material preparation in electronic industry.
Preparation:
1. Add high concentration hot water solution of NaHCO3 to the hot water solution of Gallium trichloride GaCl3, and boil it until all the hydroxide of gallium precipitates. Wash the precipitate with hot water until there is no Cl -, and calcine it above 600 ℃ to obtain β- Ga2O3. When residual NH4Cl is present, it reacts with Ga2O3 at 250 ℃ to generate volatile GaCl3.
2. This is the preparation method of high-purity Ga2O3. Using high-purity metal Ga as the anode, dissolve it in a 5% to 20% H2SO4 solution, add ammonia water to the solution, cool it, and repeatedly crystallize Ga (NH4) (SO4) 2. Dry it at 105 ℃ and burn it at 800 ℃ for 2 hours under excessive oxygen conditions to obtain a product with a purity of 99.99% to 99.9999%.
3. Weigh 1kg99.9999% high-purity gallium into a three necked flask, add high-purity nitric acid to dissolve all gallium, then filter, pour the filtrate into a three necked flask, transfer it to an electric furnace for evaporation (in a fume hood), and when it is concentrated to near crystallization, transfer the solution to a large Evaporating dish for evaporation until it is dry. Put the evaporated Ga (NO3) 3 in a muffle furnace for burning, control the temperature at 550 ℃, burn for 5h, take out the finished product after cooling, and obtain 1.2kg high-purity Gallium(III) oxide.
Safety:
Safety instructions: 24/25
WGKGermany: 2
TSCA: Yes
Customs Code: 28259090
Storage and transportation characteristics: It should be stored in a ventilated and dry place. To prevent damage to the package, the package should be kept sealed to prevent water and moisture.
